Photo-Induced Defects in Semiconductors by Richard H. Bube 0000-00-00 00:00:00

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by Richard H. Bube
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Photo-Induced Defects in Semiconductors by Richard H. Bube
Author
Richard H. Bube
Publisher
Cambridge University Press
Date of release
Pages
232
ISBN
9780521024457
Binding
Paperback
Illustrations
Format
PDF, EPUB, MOBI, TXT, DOC
Rating
4
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Book review

This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

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